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TPD7102F 2011-12-26 1 toshiba intelligent power device silicon monolithic power mos integrated circuit TPD7102F 1 channel high-side n channel po wer mosfet gate driver TPD7102F is a 1channel high-side n channel power mosfet gate driver. this ic contains a charge pump circuit, allowing easy configuration of a high-side switch for large-current applications. features z charge pump circuit is built in z the diagnosis function of the vo ltage between out1 and source is built in z housed in the ps-8 package and supplied in embossed carrier tape. pin assignment (top view) marking note:that because of its mos structure, this product is sensitive to static electricity. son8-p-0303-0.65 weight: 0.017g (typ.) diag 1 enb 2 in 3 gnd 4 8 v dd 7 out1 6 out2 5 source (top view lot no. d7102 part no. (or abbreviation code) ? note: on the lower left of the marking indicates pin 1 *weekly code: (three digits) week of manufacture (01 for first week of year, continuing up to 52 or 53) year of manufacture (the last digit of the calendar year) please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of product. the rohs is the directive 2002/95/ec of the european parliament and of the council of 27 january 2003 on the restriction of the use of certain
TPD7102F 2011-12-26 2 block diagram / application circuit charge pump out1-source voltage (vgs) monitor circuit diagnosis logic filter (2.2 s) amp 1/7 comp input logic regulator (v reg ) in enb diag gnd source out1 out2 v dd batt 5v load v dd +10v 1ma oscillation circuit 5k ? 1m ? constant current driver output voltage protection
TPD7102F 2011-12-26 3 pin description pin no. symbol function 1 diag diagnosis detection pin. n channel open drain. 2 enb enable pin. the enb pin has a pull-down resistor. when v enb is l, out1 is hz and out2 is l. 3 in input pin. the in pin has a pull-down resistor. when v in and v enb are h, out1 and out2 are h. 4 gnd ground pin. 5 source source voltage of the external power mosfet monitor pin. 6 out2 output pin 2. 7 out1 output pin 1. 8 v dd power supply pin. timing chart note: in and enb apply h, after v dd applied operating supply voltage. v dd v enb v in charge pump v out1 v out2 v gs (v out1 -v source ) v diag v dd over voltage detection v gs under voltage detection operating supply voltage v dd min not operating operating l h l h hz(high impedance) h l h l h v gs under voltage detection. hz(high impedance) l normal (normality v gs ) v dd over voltage protection (oscillation stop)
TPD7102F 2011-12-26 4 truth table in signal enb signal charge pump circuit v out1 v out2 v gs diag mode l l hz l hz h l hz l hz l h oscillation stop hz l hz h h oscillation h h v gs =h l l l hz l hz h l hz l hz l h oscillation stop hz l hz h h oscillation h h v gs =l hz normal (v dd =7 to 18v) l l hz l hz h l hz l hz l h hz l hz h h h h v gs =h l l l hz l hz h l hz l hz l h hz l hz h h oscillation stop h h v gs =l hz v dd over volatage (v dd >18v) note: v gs =h(v gs >v gsuv ) / v gs =l(v gs v gsuv ) *v gs =v out1 -v source note: hz: high impedance * diag is l only when v in and v enb and v gs are h.
TPD7102F 2011-12-26 5 absolute maximum ratings (ta = 25c) characteristics symbol rating unit remarks dc v dd(1) -0.3 to 25 v power supply voltage pulse v dd(2) 35 v t=400ms single pulse input voltage v in -0.3 to 6 v diagnosis output voltage v diag -0.3 to 25 v diagnosis output current i diag 2 ma output sink current(dc) i out2 (+) 5 ma sink current source pin negative voltage -v source -7 v t 0.1 s, source pin 10k ? connect power dissipation (note 1-a) p d(1) 0.7 w power dissipation (note 1-b) p d(2) 0.35 w operating temperature t opr -40 to 125 c junction temperature t j 150 c strage temperature t stg -55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperatur e/current/voltage and the significant change in temperature, etc. ) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin g temperature/current/voltage, etc. ) are within the absolute maximum ratings and the operating ranges. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal resistance characteristic symbol rating unit 178.6(note 1-a) thermal resistance, junction to ambient r th (j?a) 357.2(note 1-b) c / w note 1: (a)glass epoxy board (b)glass epoxy board glass epoxy board material: fr-4 25.4mm25.4mm0.8mm glass epoxy board material: fr-4 25.4mm25.4mm0.8mm
TPD7102F 2011-12-26 6 electrical characteristics (unless otherwise specified, t j = -40 to 125c, v dd = 7 to 18v) characteristics symbol pin te st condition min typ. max unit operating supply voltage (charge pump circuit, input logic, diagnosis logic operate) v dd(opr) v dd - 7 12 18 v i dd(off) v dd v dd = 18v, v in =v enb = 0v - 0.35 2 ma supply current i dd(on) v dd v dd = 18v, v in =v enb = 5v - 3 8 ma v inh - 3.5 - - input voltage v inl in, enb - - - 1.5 v i inh, i enbh v in =v enb = 5v *each pin current - 50 200 input current i inll, i enbl in, enb v in =v enb = 0v *each pin current -1 - 1 a v out1h out1 v dd = 9 to 18v, v in =v enb =5v, v source =v dd , out1-source 1m ? v dd -2.7 v dd -1 v dd v output voltage v out2h out2 v dd = 9 to 18v, v in =v enb =5v, v source =v dd , out2-source 1m ? v dd + 6.0 v dd +10 v dd +12.5 v out2 sink dmos on-resistance r onout2l out2 v dd = 7 to 18v, v in =v enb = 0v, i out2 =1ma - 70 180 ? out1 high level output current ioh1 out1 v dd =9 to 18v, v in =v enb =5v - -1.0 -0.15 ma out1 output leakage current iol1 out1 v dd =9 to 18v, v in =v enb =0v -1 - - a out1 sink current i out1+ out1 v out1 =12v,v in =v enb =0v - 5 20 a out2 output current ioh2 out2 v dd =9 to 18v, v in =v enb =5v, v out2 =v dd +6v - -100 -30 a diagnosis output leakage current i diagh diag v dd = 7 to 18v, v in =v enb =0v v diag = 5v - - 10 a diagnosis output voltage v diagl diag v dd = 7 to 18v, v in =v enb =5v i diag = 1ma - - 0.4 v v gs under voltage detection (out1-source voltage) v gsuv out1, source v dd = 9 to 18v, v in =v enb =5v 3.3 4.1 4.8 v v dd over voltage detection v ddov v dd - 18 22 25 v t on - 16 100 switching time t off in out1 refer to test circuit 7 - 2 10 s note: typical condition is v dd =12v, t j =25 c . note: sink current to this ic is expressed by ?+?, source current from this ic is expressed by ?-?.
TPD7102F 2011-12-26 7 test circuit 1 supply current i dd(off) test circuit 2 supply current i dd(on) test circuit 3 output voltage v out1h test circuit 4 output voltage v out2h test circuit 5 out1 high level output current ioh1 diag enb in gnd v dd out1 out2 source a i dd ( off ) 18v diag enb in gnd v dd out1 out2 source a i dd ( on ) 18v 5v diag enb in gnd v dd out1 out2 source 9 to 18v 5v v 1m ? 5v diag enb in gnd v dd out1 out2 source 9 to 18v v 1m ? diag enb in gnd v dd out1 out2 source 9 to 18v 5v a i oh1
TPD7102F 2011-12-26 8 test circuit 6 v gs under voltage detection test circuit 7 switching time t on , t off diag enb in gnd v dd out1 out2 source 9 to 18v 5v v gs v 1k ? v gs =v out1 -v source v diag v gs under voltage detection diag enb in gnd v dd out1 out2 source 9v v out1 p.g 5v t on t off 10% 90% v dd +4v 1.5v t r 0.1 s t f 0.1 s v in 5k ? 1m ? 100pf v
TPD7102F 2011-12-26 9 1.0 2.0 3.0 4.0 -80 -40 0 40 80 120 160 1.0 2.0 3.0 4.0 0 4 8 12 16 20 1.0 2.0 3.0 4.0 -80 -40 0 40 80 120 160 1.0 2.0 3.0 4.0 0 4 8 12 16 20 0.0 1.0 2.0 3.0 4.0 5.0 -80 -40 0 40 80 120 160 0.0 1.0 2.0 3.0 4.0 5.0 0 4 8 12 16 20 supply current i dd [ma] supply voltage v dd [v] i dd - v dd t j =25c v enb =5v v in =0v v in =5v in input voltage v ih ,v il [v] supply voltage v dd [v] v ih ,v il - v dd t j =25c v il v ih enb input voltage v inh ,v inl [v] supply voltage v dd [v] v inh ,v inl - v dd t j =25c v inl v inh supply current i dd [ma] junction temperature t j [c] i dd - t j v dd =18v v enb =5v v in =0v v in =5v in input voltage v ih ,v il [v] junction temperature t j [c] v ih ,v il - t j v dd =12v v il v ih enb input voltage v inh ,v inl [v] junction temperature t j [c] v inh ,v inl - t j v dd =12v v inl v inh
TPD7102F 2011-12-26 10 0 4 8 12 16 20 -80 - 40 0 40 80 120 160 0 4 8 12 16 20 0 4 8 12 16 20 0 20 40 60 80 100 -80 -40 0 40 80 120 160 0 20 40 60 80 100 0 2 4 6 8 0 20 40 60 80 100 0 2 4 6 8 0 20 40 60 80 100 -80 -40 0 40 80 120 160 input current i in [ a] input voltage v in [v] i in - v in t j =25c input current i enb [ a] input voltage v enb [v] i enb - v enb t j =25c output voltage v out1h [v] supply voltage v dd [v] v out1h - v dd t j =25c v in =v enb =5v input current i inh [ a] junction temperature t j [c] i inh - t j v in =5v input current i enbh [ a] junction temperature t j [c] i enbh - t j v dd =12v v enb =5v output voltage v out1h [v] junction temperature t j [c] v out1h - t j v dd =12v v in =v enb =5v
TPD7102F 2011-12-26 11 output drop voltage v out2h (v dd -v out2h )[v] output drop voltage v out2h (v dd -v out2h )[v] 0 10 20 30 40 -80 - 40 0 40 80 120 160 0 10 20 30 40 0 4 8 12 16 20 0 4 8 12 16 20 -80 - 40 0 40 80 120 160 0 4 8 12 16 20 0 4 8 12 16 20 0.0 1.0 2.0 3.0 -80 -40 0 40 80 120 160 0.0 1.0 2.0 3.0 0 4 8 12 16 20 output drop voltage v out1h (v dd -v out1h )[v] supply voltage v dd [v] v out1h - v dd t j =25c v in =v enb =5v output voltage v out2h [v] supply voltage v dd [v] v out2h - v dd t j =25c v in =v enb =5v supply voltage v dd [v] v out2h - v dd t j =25c v in =v enb =5v junction temperature t j [c] v out1h - t j v dd =12v v in =v enb =5v output voltage v out2h [v] junction temperature t j [c] v out2h - t j v dd =12v v in =v enb =5v junction temperature t j [c] v out2h - t j v dd =12v v in =v enb =5v output drop voltage v out1h (v dd -v out1h )[v]
TPD7102F 2011-12-26 12 output boost voltage v out2 (v out2 -v dd )[v] 0 2 4 6 8 10 12 110100 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 - 80 - 40 0 40 80 120 160 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 0 4 8 12 16 20 0 40 80 120 160 -80 -40 0 40 80 120 160 0 40 80 120 160 0 4 8 12 16 20 out2 sink dmos on-resistance r onout2l [? ] supply voltage v dd [v] r onout2l - v dd t j =25c v in =v enb =0v i out2 =1ma out1 high level output current i oh1 [ma] supply voltage v dd [v] i oh1 - v dd t j =25c v in =v enb =5v out2 sink dmos on-resistance r onout2l [? ] junction temperature t j [c] r onout2l - t j v dd =12v v in =v enb =5v i out2 =1ma out1 high level output current i oh1 [ma] junction temperature t j [c] i oh1 - t j v dd =12v v in =v enb =5v output current - i out2 [ a] v out2 ? - i out2 v dd =7v 8v 9v 12v 18v t j =25c v enb =v in =5v
TPD7102F 2011-12-26 13 3.0 3.4 3.8 4.2 4.6 5.0 -80 -40 0 40 80 120 160 3.0 3.4 3.8 4.2 4.6 5.0 0 4 8 12 16 20 0.0 0.1 0.2 0.3 0.4 0.5 -80 -40 0 40 80 120 160 0.0 0.1 0.2 0.3 0.4 0.5 0 4 8 12 16 20 supply voltage v dd [v] v dl - v dd t j =25c i diag =1ma v gs under voltage detection v gsuv [v] supply voltage v dd [v] v gsuv - v dd t j =25c junction temperature t j [c] v dl - t j v dd =12v i diag =1ma v gs under voltage detection v gsuv [v] junction temperature t j [c] v gsuv - t j v dd =12v diagnosis output voltage v dl [v] diagnosis output voltage v dl [v] 0 4 8 12 16 20 -80 - 40 0 40 80 120 160 out1 sink current i out1+ [ a] junction temperature t j [c] i out1+ - t j v dd =v out1 =12v v in =v enb =0v
TPD7102F 2011-12-26 14 0.00 0.20 0.40 0.60 0.80 1.00 -40 0 40 80 120 160 15 17 19 21 23 25 -80 - 40 0 40 80 120 160 v dd over voltage detection v ddov [v] junction temperature t j [c] v ddov - t j power dissipation p d [w] ambient temperature t a [c] p d - t a (1)mount on glass epoxy board (a) (note 1-a) (2)mount on glass epoxy board (b) (note 1-b) (1) (2)
TPD7102F 2011-12-26 15 package dimensions son8-p-0303-0.65 unit mm weight 0.017g(typ.) 0.330.05 2.40.1 0.80.05 0.330.05 0.475 0.65 0.170.02 2.80.1 s a 0.05 m b 2.90.1 0.28 +0.1 -0.11 0.28 +0.1 -0.11 1.12 +0.13 -0.12 1.12 +0.13 -0.12 b 0.05 m a s 0.025
TPD7102F 2011-12-26 16 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the ?toshiba semiconductor reliability handbook? and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? a bsent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or m anufacturing of nuclear, chemical , or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the japanese foreign exchange and foreign trade law and the u.s. expor t administration regulations. ex port and re-export of product or related software or technology are strictly prohibited exc ept in compliance with all applicable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result o f noncompliance with applicable laws and regulations.

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